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NTMYS4D1N06CLTWG

NTMYS4D1N06CLTWG

MOSFET N-CH 60V 22A/100A LFPAK4

NTMYS4D1N06CLTWG

NTMYS4D1N06CLTWG

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Part No :

NTMYS4D1N06CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 22A/100A LFPAK4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
241924 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 06 - Feb 10 2025
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK4 (5x6)
Package / Case:SOT-1023, 4-LFPAK
NTMYS4D1N06CLTWG is available at GangBo-ic.com, Please review product page below for detailed information, including NTMYS4D1N06CLTWG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMYS4D1N06CLTWG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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