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STI10N62K3

STI10N62K3

MOSFET N-CH 620V 8.4A I2PAK

STI10N62K3

STI10N62K3

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Part No :

STI10N62K3

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 620V 8.4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
371937 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
STI10N62K3 PDF
Type Description
Series:SuperMESH3™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 50 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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