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MLG0603P4N3JTD25

MLG0603P4N3JTD25

FIXED IND 4.3NH 350MA 400 MOHM

FQD6N40CTM

FQD6N40CTM

MOSFET N-CH 400V 4.5A DPAK

FQD6N40CTM

FQD6N40CTM

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Part No :

FQD6N40CTM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 400V 4.5A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
321932 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
FQD6N40CTM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:625 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD6N40CTM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD6N40CTM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD6N40CTM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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