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TN0110N3-G-P002

TN0110N3-G-P002

MOSFET N-CH 100V 350MA TO92-3

52-CBSA-2.0X5.25X0.5

52-CBSA-2.0X5.25X0.5

RF SHIELD 2" X 5.25" T/H

1-1670782-1

1-1670782-1

18POS, MIXED,REC HSG,ASSY,CODA

DSC1101CE2-045.1584T

DSC1101CE2-045.1584T

MEMS OSC XO 45.1584MHZ CMOS SMD

TN0110N3-G-P002

TN0110N3-G-P002

Image is for reference, please contact us to get the real picture

Part No :

TN0110N3-G-P002

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET N-CH 100V 350MA TO92-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
351935 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
TN0110N3-G-P002 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:350mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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