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SI3417DV-T1-GE3

SI3417DV-T1-GE3

MOSFET P-CH 30V 8A 6TSOP

SI3417DV-T1-GE3

SI3417DV-T1-GE3

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Part No :

SI3417DV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 8A 6TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16094 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 05 - Feb 09 2025
PDF
SI3417DV-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25.2mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 4.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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