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FQPF11P06

FQPF11P06

MOSFET P-CH 60V 8.6A TO220F

FQPF11P06

FQPF11P06

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Part No :

FQPF11P06

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 8.6A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11126 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 06 - Feb 10 2025
PDF
FQPF11P06 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
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