RES 36.1K OHM 1/10W .1% AXIAL
MOSFET N-CH 650V 78A SOT227B
TERM BLOCK COVER PLSTC
CONN RF COAX RECEPT L-SHAPE PCB
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 30mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 183 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 10800 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 595W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STL120N4F6AGSTMicroelectronics |
MOSFET N-CH 40V 55A POWERFLAT |
|
NTMFS4936NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.6A/79A 5DFN |
|
SI3417DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
FQD6N40CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 4.5A DPAK |
|
IRF830APBFVishay / Siliconix |
MOSFET N-CH 500V 5A TO220AB |
|
IPP09N03LARochester Electronics |
MOSFET N-CH 25V 50A TO220-3 |
|
TN0110N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 100V 350MA TO92-3 |
|
FQPF11P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 8.6A TO220F |
|
STI10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A I2PAK |
|
IPW60R018CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
NTMS5P02R2Rochester Electronics |
MOSFET P-CH 20V 3.95A 8SOIC |
|
BSC014N06LS5ATMA1IR (Infineon Technologies) |
MOSFET 60V TDSON-8-7 |
|
CSD19505KTTTexas Instruments |
MOSFET N-CH 80V 200A DDPAK |