MOSFET N-CH 800V 27A SOT-227B
IC REG LINEAR 4.75V 500MA SOT25
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 320mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 520W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPS60R1K0PFD7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.7A TO251-3 |
|
AUIRFS8409-7TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
NTMYS014N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A/36A 4LFPAK |
|
RM35P30LDVRectron USA |
MOSFET P-CHANNEL 30V 35A TO252-2 |
|
IPA65R1K5CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.2A TO220 |
|
IXTQ16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO3P |
|
IMW120R350M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 4.7A TO247-3 |
|
ISL9N327AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPW21N50C3FKSA1Rochester Electronics |
MOSFET N-CH 560V 21A TO247-3 |
|
TK125V65Z,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 24A 5DFN |
|
APT30M36JLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
NVTFS5124PLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
FDMS86103LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/49A 8PQFN |