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RM35P30LDV

RM35P30LDV

MOSFET P-CHANNEL 30V 35A TO252-2

RM35P30LDV

RM35P30LDV

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Part No :

RM35P30LDV

Manufacturer
Rectron USA
Description
MOSFET P-CHANNEL 30V 35A TO252-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
072307 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1345 pF @ 15 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-2
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RM35P30LDV is available at GangBo-ic.com, Please review product page below for detailed information, including RM35P30LDV price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM35P30LDV to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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