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FDMS86103L

FDMS86103L

MOSFET N-CH 100V 12A/49A 8PQFN

FDMS86103L

FDMS86103L

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Part No :

FDMS86103L

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 12A/49A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
FDMS86103L PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3710 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
FDMS86103L is available at GangBo-ic.com, Please review product page below for detailed information, including FDMS86103L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMS86103L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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