MOSFET N-CH 560V 21A TO247-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 560 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 95 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.4 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK125V65Z,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 24A 5DFN |
|
APT30M36JLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
NVTFS5124PLWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
FDMS86103LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/49A 8PQFN |
|
APT18F60BRoving Networks / Microchip Technology |
MOSFET N-CH 600V 19A TO247 |
|
SIHP8N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
|
STB35NF10T4STMicroelectronics |
MOSFET N-CH 100V 40A D2PAK |
|
HUF75545P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 75A TO220-3 |
|
BUK9Y8R7-60E,115Nexperia |
MOSFET N-CH 60V 86A LFPAK56 |
|
BS170PZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA TO92-3 |
|
AO3401Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 4A SOT23-3 |
|
BF2030-E6327Rochester Electronics |
RF N-CHANNEL MOSFET |
|
IRFP3306PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO247AC |