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IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-3

IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

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Part No :

IMW120R350M1HXKSA1

Manufacturer
IR (Infineon Technologies)
Description
SICFET N-CH 1.2KV 4.7A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10160 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:CoolSiC™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1.2 kV
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V, 18V
Rds On (Max) @ Id, Vgs:455mOhm @ 2A, 18V
Vgs(th) (Max) @ Id:5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.3 nC @ 18 V
Vgs (Max):+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds:182 pF @ 800 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
IMW120R350M1HXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IMW120R350M1HXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IMW120R350M1HXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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