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IPS60R1K0PFD7SAKMA1

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MOSFET N-CH 650V 4.7A TO251-3

IPS60R1K0PFD7SAKMA1

IPS60R1K0PFD7SAKMA1

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Part No :

IPS60R1K0PFD7SAKMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 4.7A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
Type Description
Series:CoolMOS™PFD7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:230 pF @ 400 V
FET Feature:-
Power Dissipation (Max):26W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
IPS60R1K0PFD7SAKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPS60R1K0PFD7SAKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPS60R1K0PFD7SAKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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