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BSC196N10NSGATMA1

BSC196N10NSGATMA1

MOSFET N-CH 100V 8.5A/45A TDSON

BSC196N10NSGATMA1

BSC196N10NSGATMA1

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Part No :

BSC196N10NSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 8.5A/45A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10431 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
BSC196N10NSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4V @ 42µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 50 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
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