MOSFET N-CH 100V 180A TO220AB
Type | Description |
---|---|
Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 185 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10500 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 480W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQP2N60Rochester Electronics |
MOSFET N-CH 600V 2.4A TO220-3 |
|
IRFU430APBFVishay / Siliconix |
MOSFET N-CH 500V 5A TO251AA |
|
UPA2708GR-E1-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB19N20TMRochester Electronics |
MOSFET N-CH 200V 19.4A D2PAK |
|
FDD86369Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 90A DPAK |
|
FDN352APSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.3A SUPERSOT3 |
|
SI2336DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 5.2A SOT23-3 |
|
FQI7P06TURochester Electronics |
MOSFET P-CH 60V 7A I2PAK |
|
FCPF850N80ZRochester Electronics |
MOSFET N-CH 800V 6A TO220F |
|
SUP90P06-09L-E3Vishay / Siliconix |
MOSFET P-CH 60V 90A TO220AB |
|
SQ2361AEES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.8A SSOT23 |
|
TK10A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 10A TO220SIS |
|
BS170Rochester Electronics |
MOSFET N-CH 60V 300MA TO92-3 |