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FCPF850N80Z

FCPF850N80Z

MOSFET N-CH 800V 6A TO220F

FCPF850N80Z

FCPF850N80Z

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Part No :

FCPF850N80Z

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 6A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 23 - Dec 27 2024
PDF
FCPF850N80Z PDF
Type Description
Series:SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.315 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FCPF850N80Z is available at GangBo-ic.com, Please review product page below for detailed information, including FCPF850N80Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCPF850N80Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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