MOSFET P-CH 60V 90A TO220AB
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.3mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 9200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.4W (Ta), 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQ2361AEES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 2.8A SSOT23 |
|
TK10A55D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 10A TO220SIS |
|
BS170Rochester Electronics |
MOSFET N-CH 60V 300MA TO92-3 |
|
RM60P60HDRectron USA |
MOSFET P-CHANNEL 60V 61A TO263-2 |
|
APT48M80B2Roving Networks / Microchip Technology |
MOSFET N-CH 800V 49A T-MAX |
|
SFP9530Rochester Electronics |
MOSFET P-CH 100V 10.5A TO220-3 |
|
RM20N650TIRectron USA |
MOSFET N-CHANNEL 650V 20A TO220F |
|
IXFK170N20PWickmann / Littelfuse |
MOSFET N-CH 200V 170A TO264AA |
|
IXFN160N30TWickmann / Littelfuse |
MOSFET N-CH 300V 130A SOT227B |
|
STWA50N65DM2AGSTMicroelectronics |
MOSFET N-CH 650V 38A TO247 |
|
PSMN015-100YLXNexperia |
MOSFET N-CH 100V 69A LFPAK56 |
|
FDP7030LRochester Electronics |
MOSFET N-CH 30V 80A TO220-3 |
|
APT39F60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 42A ISOTOP |