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FDP18N50

FDP18N50

MOSFET N-CH 500V 18A TO220-3

FDP18N50

FDP18N50

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Part No :

FDP18N50

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 500V 18A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10611 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 23 - Dec 27 2024
PDF
FDP18N50 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:265mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2860 pF @ 25 V
FET Feature:-
Power Dissipation (Max):235W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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