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FQB19N20TM

FQB19N20TM

MOSFET N-CH 200V 19.4A D2PAK

FQB19N20TM

FQB19N20TM

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Part No :

FQB19N20TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 19.4A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10612 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
FQB19N20TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:19.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1.6 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB19N20TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB19N20TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB19N20TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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