MOSFET N-CH 950V 7.5A I2PAKFP
ISOLATED GATE DRIVER
Type | Description |
---|---|
Series: | MDmesh™ K5 |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 950 V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 500mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 855 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 30W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAKFP (TO-281) |
Package / Case: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
FDBL0120N40Rochester Electronics |
MOSFET N-CH 40V 240A 8HPSOF |
![]() |
AOSP32314Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 14.5A 8SOIC |
![]() |
BS170-D26ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
![]() |
IPA80R1K4CEXKSA1Rochester Electronics |
MOSFET N-CH 800V 2.8A TO220 |
![]() |
TK650A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11A TO220SIS |
![]() |
FDD6796Rochester Electronics |
MOSFET N-CH 25V 20A/40A DPAK |
![]() |
SI3127DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 3.5A/13A 6TSOP |
![]() |
SSP3N80ARochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
NTMSD3P102R2Rochester Electronics |
MOSFET P-CH 20V 2.34A 8SOIC |
![]() |
STL285N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
![]() |
DMTH10H005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 140A TO220AB |
![]() |
FCI7N60Rochester Electronics |
MOSFET N-CH 600V 7A I2PAK |
![]() |
IRLR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |