MOSFET N-CH 100V 4.3A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 5V |
Rds On (Max) @ Id, Vgs: | 540mOhm @ 2.6A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6.1 nC @ 5 V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 250 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
DMG2302UKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 T&R 3 |
![]() |
IRFU5505PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A IPAK |
![]() |
TSM60NB1R4CH C5GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 3A TO251 |
![]() |
AUIRFS8409Rochester Electronics |
MOSFET N-CH 40V 195A D2PAK |
![]() |
STL135N8F7AGSTMicroelectronics |
MOSFET N-CH 80V 130A POWERFLAT |
![]() |
SIHB22N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A D2PAK |
![]() |
PMPB10XNE,115Nexperia |
MOSFET N-CH 20V 9A DFN2020MD-6 |
![]() |
NVR4003NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 500MA SOT23 |
![]() |
SIHFR430ATRL-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
![]() |
AOB266LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 18A/140A TO263 |
![]() |
IRFR9220TRLPBFVishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
![]() |
RSQ035P03HZGTRROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6 |
![]() |
STL120N2VH5STMicroelectronics |
MOSFET N-CH 20V 120A POWERFLAT |