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IPA80R1K4CEXKSA1

IPA80R1K4CEXKSA1

MOSFET N-CH 800V 2.8A TO220

IPA80R1K4CEXKSA1

IPA80R1K4CEXKSA1

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Part No :

IPA80R1K4CEXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 2.8A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10734 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
IPA80R1K4CEXKSA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id:3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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