LAMP INCAND 10MM T-10 AXIAL 12V
MOSFET N-CH 30V 14.5A 8SOIC
RELAY GEN PURPOSE SPDT 20A 9V
EMI HEATSHRINK BOOT BRKOUT 2:1 T
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1420 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BS170-D26ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
IPA80R1K4CEXKSA1Rochester Electronics |
MOSFET N-CH 800V 2.8A TO220 |
|
TK650A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11A TO220SIS |
|
FDD6796Rochester Electronics |
MOSFET N-CH 25V 20A/40A DPAK |
|
SI3127DV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 3.5A/13A 6TSOP |
|
SSP3N80ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMSD3P102R2Rochester Electronics |
MOSFET P-CH 20V 2.34A 8SOIC |
|
STL285N4F7AGSTMicroelectronics |
MOSFET N-CH 40V 120A POWERFLAT |
|
DMTH10H005SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 140A TO220AB |
|
FCI7N60Rochester Electronics |
MOSFET N-CH 600V 7A I2PAK |
|
IRLR110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
DMG2302UKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 2.8A SOT23 T&R 3 |
|
IRFU5505PBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A IPAK |