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NTMSD3P102R2

NTMSD3P102R2

MOSFET P-CH 20V 2.34A 8SOIC

NTMSD3P102R2

NTMSD3P102R2

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Part No :

NTMSD3P102R2

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 2.34A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12466 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
NTMSD3P102R2 PDF
Type Description
Series:FETKY™
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 16 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
NTMSD3P102R2 is available at GangBo-ic.com, Please review product page below for detailed information, including NTMSD3P102R2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMSD3P102R2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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