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IPD50R650CEBTMA1

IPD50R650CEBTMA1

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Part No :

IPD50R650CEBTMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 9A
Catalog
Transistors - FETs, MOSFETs - Single
Availability
610361 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPD50R650CEBTMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:342 pF @ 100 V
FET Feature:-
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:-
Supplier Device Package:-
Package / Case:-
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