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SI7119DN-T1-GE3

SI7119DN-T1-GE3

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Part No :

SI7119DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 200V 3.8A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13003 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 12 - Apr 16 2025
PDF
SI7119DN-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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