MOSFET P-CH 20V 2.8A TO236AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 74mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.7 nC @ 4 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 744 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 480mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR420PBFVishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
SQM85N15-19_GE3Vishay / Siliconix |
MOSFET N-CH 150V 85A TO263 |
|
BSS64E6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPL65R310E6AUMA1Rochester Electronics |
MOSFET N-CH 650V 13.1A THIN-PAK |
|
XP151A13A0MR-GTorex Semiconductor Ltd. |
MOSFET N-CH 20V 1A SOT23 |
|
SCH1337-TL-WRochester Electronics |
MOSFET P-CH 30V 2A SOT563/SCH6 |
|
ZXMP6A17GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 3A SOT223 |
|
IPB100N06S2L05ATMA1Rochester Electronics |
MOSFET N-CH 55V 100A TO263-3-2 |
|
SI1012CR-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V SC75A |
|
IXFR20N80PWickmann / Littelfuse |
MOSFET N-CH 800V 11A ISOPLUS247 |
|
IPAW60R600P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
BUK9M52-40EXNexperia |
MOSFET N-CH 40V 17.6A LFPAK33 |
|
IXFR48N50QWickmann / Littelfuse |
MOSFET N-CH 500V 40A ISOPLUS247 |