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BSZ037N06LS5ATMA1

BSZ037N06LS5ATMA1

MOSFET N-CH 60V 18A/40A TSDSON

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BSZ037N06LS5ATMA1

BSZ037N06LS5ATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSZ037N06LS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 18A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14189 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
BSZ037N06LS5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ037N06LS5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ037N06LS5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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