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CSD19537Q3T

CSD19537Q3T

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Part No :

CSD19537Q3T

Manufacturer
Texas Instruments
Description
MOSFET N-CH 100V 50A 8VSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12487 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1680 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON (3.3x3.3)
Package / Case:8-PowerVDFN
CSD19537Q3T is available at GangBo-ic.com, Please review product page below for detailed information, including CSD19537Q3T price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CSD19537Q3T to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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