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BSB014N04LX3GXUMA1

BSB014N04LX3GXUMA1

MOSFET N-CH 40V 36A/180A 2WDSON

BSB014N04LX3GXUMA1

BSB014N04LX3GXUMA1

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Part No :

BSB014N04LX3GXUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 36A/180A 2WDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14963 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSB014N04LX3GXUMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Last Time Buy
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16900 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
BSB014N04LX3GXUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSB014N04LX3GXUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSB014N04LX3GXUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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