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NVD6416ANLT4G

NVD6416ANLT4G

19A, 100V, 0.074OHM, N-CHANNEL,

NVD6416ANLT4G

NVD6416ANLT4G

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Part No :

NVD6416ANLT4G

Manufacturer
Rochester Electronics
Description
19A, 100V, 0.074OHM, N-CHANNEL,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
395000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:74mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1 nF @ 25 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK (SINGLE GAUGE)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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