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FDMS4D0N12C

FDMS4D0N12C

MOSFET N-CH 120V 18.5A/114A 8QFN

FDMS4D0N12C

FDMS4D0N12C

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Part No :

FDMS4D0N12C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 120V 18.5A/114A 8QFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
509450 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
FDMS4D0N12C PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Ta), 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 67A, 10V
Vgs(th) (Max) @ Id:4V @ 370A
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6460 pF @ 60 V
FET Feature:-
Power Dissipation (Max):2.7W (Ta), 106W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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