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HUF75329S3

HUF75329S3

MOSFET N-CH 55V 49A D2PAK

HUF75329S3

HUF75329S3

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Part No :

HUF75329S3

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 49A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
479447 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
HUF75329S3 PDF
Type Description
Series:UltraFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 49A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 20 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.06 pF @ 25 V
FET Feature:-
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75329S3 is available at GangBo-ic.com, Please review product page below for detailed information, including HUF75329S3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HUF75329S3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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