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IPB65R310CFDAATMA1

IPB65R310CFDAATMA1

MOSFET N-CH 650V 11.4A D2PAK

IPB65R310CFDAATMA1

IPB65R310CFDAATMA1

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Part No :

IPB65R310CFDAATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 11.4A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
499449 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPB65R310CFDAATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104.2W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R310CFDAATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB65R310CFDAATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB65R310CFDAATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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