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TSM4ND65CI

TSM4ND65CI

MOSFET N-CH 650V 4A ITO220

TSM4ND65CI

TSM4ND65CI

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Part No :

TSM4ND65CI

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 650V 4A ITO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13944 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:596 pF @ 50 V
FET Feature:-
Power Dissipation (Max):41.6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220
Package / Case:TO-220-3 Full Pack, Isolated Tab
TSM4ND65CI is available at GangBo-ic.com, Please review product page below for detailed information, including TSM4ND65CI price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM4ND65CI to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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