RES 3.3K OHM 2% 1/8W AXIAL
MOSFET P-CH 40V 11A PWRDI5060
DGTL ISO 2750VRMS 4CH GP 16SOIC
CONN RCPT STR 50 OHM SOLDER
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 61A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 15mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 67 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4004 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI5060-8 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD20N06LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
|
IPZ40N04S5L4R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
|
FCPF11N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
FDS8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
ES6U1T2RROHM Semiconductor |
MOSFET P-CH 12V 1.3A 6WEMT |
|
SI3443DVSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A SUPERSOT6 |
|
FDB8453LZRochester Electronics |
MOSFET N-CH 40V 16.1A/50A TO263 |
|
AUIRFB8407Rochester Electronics |
MOSFET N-CH 40V 195A TO220AB |
|
HUF76633S3STRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
IPU60R3K4CEAKMA1Rochester Electronics |
MOSFET N-CH 600V 2.6A TO251-3 |
|
IRF9510PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 4A TO220AB |
|
FQU12N20TURochester Electronics |
MOSFET N-CH 200V 9A I-PAK |
|
IXTH02N250Wickmann / Littelfuse |
MOSFET N-CH 2500V 200MA TO247 |