English
简体中文
MOSFET N CH 600V 2A IPAK
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | SuperMESH3™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600 V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 4.5Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 235 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | 45W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | I-PAK |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
IPDD60R150G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 16A HDSOP-10 |
|
SPD02N60S5BTMA1Rochester Electronics |
MOSFET N-CH 600V 1.8A TO252-3 |
|
IRL610ARochester Electronics |
MOSFET N-CH 200V 3.3A TO220-3 |
|
PSMN015-100P,127Nexperia |
MOSFET N-CH 100V 75A TO220AB |
|
NVTFS6H854NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 9.5A/44A 8WDFN |
|
APT38F80B2Roving Networks / Microchip Technology |
MOSFET N-CH 800V 41A T-MAX |
|
FQA24N60Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
BUK761R6-40E,118Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
TK6A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6A TO220SIS |
|
SIHG16N50C-E3Vishay / Siliconix |
MOSFET N-CH 500V 16A TO247AC |
|
STF20N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 13A TO220FP |
|
IRFR9110Rochester Electronics |
MOSFET P-CH 100V 3.1A DPAK |
|
MCT06P10-TPMicro Commercial Components (MCC) |
MOSFET P-CH 100V 6A SOT223 |