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NVMFS6H824NT1G

NVMFS6H824NT1G

MOSFET N-CH 80V 19A/103A 5DFN

WE866C3P000T001000

WE866C3P000T001000

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NVMFS6H824NT1G

NVMFS6H824NT1G

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Part No :

NVMFS6H824NT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 19A/103A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
527852 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2470 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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