MOSFET N-CH 600V 53A TO247-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 70mOhm @ 25.8A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1.72mA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3800 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 391W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSD17573Q5BTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
DMP4013SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 11A PWRDI5060 |
|
NTD20N06LT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
|
IPZ40N04S5L4R8ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
|
FCPF11N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220F |
|
FDS8870Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
ES6U1T2RROHM Semiconductor |
MOSFET P-CH 12V 1.3A 6WEMT |
|
SI3443DVSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4A SUPERSOT6 |
|
FDB8453LZRochester Electronics |
MOSFET N-CH 40V 16.1A/50A TO263 |
|
AUIRFB8407Rochester Electronics |
MOSFET N-CH 40V 195A TO220AB |
|
HUF76633S3STRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
IPU60R3K4CEAKMA1Rochester Electronics |
MOSFET N-CH 600V 2.6A TO251-3 |
|
IRF9510PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 4A TO220AB |