MOSFET N-CH 100V 2.4A TO252-2
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 350mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.4 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 274 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 2.11W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
E3M0280090DWolfspeed - a Cree company |
SICFET N-CH 900V 11.5A TO247-3 |
|
SSM3K36FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 500MA SSM |
|
TSM4ND65CITSC (Taiwan Semiconductor) |
MOSFET N-CH 650V 4A ITO220 |
|
SI7106DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 12.5A PPAK1212-8 |
|
DMP3068L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.3A SOT23 |
|
IPW60R075CPAFKSA1IR (Infineon Technologies) |
AUTOMOTIVE |
|
STU2N105K5STMicroelectronics |
MOSFET N-CH 1050V 1.5A IPAK |
|
BSL307SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 5.5A 6TSOP |
|
AOTF125A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO220F |
|
NVMFS6H824NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 19A/103A 5DFN |
|
IPAN60R280P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A TO220 |
|
2N6760Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW60R070C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 53A TO247-3 |