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E3M0280090D

E3M0280090D

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E3M0280090D

E3M0280090D

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Part No :

E3M0280090D

Manufacturer
Wolfspeed - a Cree company
Description
SICFET N-CH 900V 11.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
437843 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
E3M0280090D PDF
Type Description
Series:E-Series, Automotive
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id:3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 15 V
Vgs (Max):+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 600 V
FET Feature:-
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
E3M0280090D is available at GangBo-ic.com, Please review product page below for detailed information, including E3M0280090D price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for E3M0280090D to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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