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SI4100DY-T1-GE3

SI4100DY-T1-GE3

MOSFET N-CH 100V 6.8A 8SO

SI4100DY-T1-GE3

SI4100DY-T1-GE3

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Part No :

SI4100DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 6.8A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14215 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SI4100DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:63mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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