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G3R350MT12D

G3R350MT12D

SIC MOSFET N-CH 11A TO247-3

G3R350MT12D

G3R350MT12D

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Part No :

G3R350MT12D

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 11A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11167 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 800 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
G3R350MT12D is available at GangBo-ic.com, Please review product page below for detailed information, including G3R350MT12D price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for G3R350MT12D to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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