MOSFET P-CH 500V 20A TO268
Type | Description |
---|---|
Series: | PolarP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 450mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 103 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5120 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 460W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK7P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 7A DPAK |
|
IRF7413PBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |
|
IRF7424TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
BSC065N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CHANNEL 60V 64A 8TDSON |
|
BSZ019N03LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 22A . 40A TSDSON |
|
NVMFS5C450NAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 24A/102A 5DFN |
|
IRFSL4510PBFRochester Electronics |
MOSFET N-CH 100V 61A TO262 |
|
AOB360A70LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO263 |
|
FQPF7P06Rochester Electronics |
MOSFET P-CH 60V 5.3A TO220F |
|
IRF1010EPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 84A TO220AB |
|
SUD20N10-66L-GE3Vishay / Siliconix |
MOSFET N-CH 100V 16.9A TO252 |
|
STL18N55M5STMicroelectronics |
MOSFET N-CH 550V 2.4A POWERFLAT |
|
TK65G10N1,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 65A D2PAK |