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HUF76609D3S

HUF76609D3S

MOSFET N-CH 100V 10A DPAK

HUF76609D3S

HUF76609D3S

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Part No :

HUF76609D3S

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 10A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10799 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
HUF76609D3S PDF
Type Description
Series:UltraFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:425 pF @ 25 V
FET Feature:-
Power Dissipation (Max):49W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76609D3S is available at GangBo-ic.com, Please review product page below for detailed information, including HUF76609D3S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HUF76609D3S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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