MOSFET N-CH 150V 51.6A PPAK SO-8
Type | Description |
---|---|
Series: | ThunderFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 51.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Rds On (Max) @ Id, Vgs: | 17.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31 nC @ 7.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1516 pF @ 75 V |
FET Feature: | - |
Power Dissipation (Max): | 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ISL9N304AP3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TN0620N3-G-P002Roving Networks / Microchip Technology |
MOSFET N-CH 200V 250MA TO92-3 |
|
IPC100N04S5L1R9ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |
|
FQA62N25CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 62A TO3PN |
|
DMNH6011LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 55V 80A TO252 T&R |
|
PSMN1R5-40ES,127Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
G3R350MT12DGeneSiC Semiconductor |
SIC MOSFET N-CH 11A TO247-3 |
|
BUK652R6-40C,127Rochester Electronics |
MOSFET N-CH 40V 120A TO220AB |
|
SSP4N90ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
HUF76609D3SRochester Electronics |
MOSFET N-CH 100V 10A DPAK |
|
IXTT20P50PWickmann / Littelfuse |
MOSFET P-CH 500V 20A TO268 |
|
TK7P60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 7A DPAK |
|
IRF7413PBFRochester Electronics |
MOSFET N-CH 30V 13A 8SO |