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IRFH8201TRPBF

IRFH8201TRPBF

MOSFET N-CH 25V 49A/100A 8PQFN

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IRFH8201TRPBF

IRFH8201TRPBF

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Part No :

IRFH8201TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 49A/100A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
556755 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 16 - Jun 20 2024
PDF
IRFH8201TRPBF PDF
Type Description
Series:HEXFET®, StrongIRFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:111 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7330 pF @ 13 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
IRFH8201TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH8201TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH8201TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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