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SIT8209AI-31-28E-166.666600X

SIT8209AI-31-28E-166.666600X

MEMS OSC XO 166.6666MHZ LVCMOS

IPW60R040CFD7XKSA1

IPW60R040CFD7XKSA1

MOSFET N-CH 600V 50A TO247-3

902-560

902-560

ROUND SPACER NYLON 14.22MM

IPW60R040CFD7XKSA1

IPW60R040CFD7XKSA1

Image is for reference, please contact us to get the real picture

Part No :

IPW60R040CFD7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 50A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10263 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPW60R040CFD7XKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs:109 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4354 pF @ 400 V
FET Feature:-
Power Dissipation (Max):227W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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