MOSFET N-CH 30V 86A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 86A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.33 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TSM70N380CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 11A ITO220AB |
|
IRFR13N20DTRLPRochester Electronics |
MOSFET N-CH 200V 13A DPAK |
|
SFP9540Rochester Electronics |
MOSFET P-CH 100V 17A TO220-3 |
|
SIS322DNT-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 38.3A PPAK1212-8 |
|
DMNH4006SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 18A/90A TO252 |
|
FQU2N90TURochester Electronics |
MOSFET N-CH 900V 1.7A IPAK |
|
SIHG039N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 61A TO247AC |
|
IRFL210TRPBFVishay / Siliconix |
MOSFET N-CH 200V 960MA SOT223 |
|
PSMN016-100BS,118Nexperia |
MOSFET N-CH 100V 57A D2PAK |
|
FQP18N50V2Rochester Electronics |
MOSFET N-CH 500V 18A TO220-3 |
|
APT24F50BRoving Networks / Microchip Technology |
MOSFET N-CH 500V 24A TO247 |
|
MCH3475-TL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.8A SC70 |
|
FQPF34N20LRochester Electronics |
MOSFET N-CH 200V 17.5A TO220F |