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IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3

IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

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Part No :

IPI076N12N3GAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
586758 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
IPI076N12N3GAKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:101 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6640 pF @ 60 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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